Measurement of the band gap of GexSi1−x/Si strained-layer heterostructures
- 15 December 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (12) , 1333-1335
- https://doi.org/10.1063/1.96271
Abstract
We have used photocurrent spectroscopy to measure the optical absorption spectra of coherently strained layers of GexSi1−x grown on 〈001〉 Si by molecular beam epitaxy. A dramatic lowering of the indirect band gap, relative to that of unstrained bulk Ge-Si alloys, is observed. Our results for 0≤x≤0.7 are in remarkably good agreement with recent calculations of the effects of misfit strain on the band edges of coherently strained Ge-Si heterostructures. At x=0.6, the gap is lower than that of pure Ge.Keywords
This publication has 14 references indexed in Scilit:
- Indirect band gap of coherently strained bulk alloys on 〈001〉 silicon substratesPhysical Review B, 1985
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974
- Quantum resonances in the valence bands of germanium. II. Cyclotron resonances in uniaxially stressed crystalsPhysical Review B, 1974
- Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation PotentialsPhysical Review B, 1963
- Theory of Cyclotron Resonance in Strained Silicon CrystalsPhysical Review B, 1963
- Deformation Potential in Germanium from Optical Absorption Lines for Exciton FormationPhysical Review Letters, 1959
- Optical properties of semiconductors under hydrostatic pressure—IIIJournal of Physics and Chemistry of Solids, 1958
- Intrinsic Optical Absorption in Germanium-Silicon AlloysPhysical Review B, 1958