Electrically Active Defects in Cid Imaging Arrays Fabricated on Hg0.7 Cd0.3Te
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
CID imaging arrays were fabricated on Hg0.7 Cd0.3Te produced by the solid state recrystallization technique. It was found that the most serious source of dark current was sub-grain boundaries. SEM studies of the microstructure revealed by etching showed that boundaries with a high denisty of dislocations were detectable sources of dark current, while those boundaries with a low density of dislocations, as well as individual dislocations were not. TEM showed that all dislocations were free of precipitates, and most were not dissociated. The sub-grain boundaries were found to arise from misorientation between dendrites which form during the solidification from the melt.Keywords
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