Comparison of the selective adsorption and reactivity behavior of WF6 and TaF5 on SiO2 and polyimide surfaces
- 13 August 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (7) , 667-669
- https://doi.org/10.1063/1.104254
Abstract
The initial stages of WF6 and TaF5 adsorption on SiO2 and polyimide surfaces were investigated by photoelectron spectroscopy. WF6 selectively adsorbs on Si relative to SiO2 and polyimide, while TaF5 exhibited nonselective adsorption behavior. This trend is explained by differences in molecular structure and suggests a general basis for predicting selective deposition.Keywords
This publication has 8 references indexed in Scilit:
- Laser-assisted deposition of thin films from gas-phase and surface-adsorbed moleculesChemical Reviews, 1989
- Mechanism for chemical-vapor deposition of tungsten on silicon from tungsten hexafluorideJournal of Applied Physics, 1988
- Polyimide Film Properties and Selective LPCVD of Tungsten on PolyimideJournal of the Electrochemical Society, 1988
- High-Temperature SiDecomposition at the Si/Si InterfacePhysical Review Letters, 1985
- A review of LPCVD metallization for semiconductor devicesVacuum, 1985
- First results from a 6 m/10 m toroidal grating monochromator for soft x-raysNuclear Instruments and Methods in Physics Research, 1984
- An ellipsoidal mirror display analyzer system for electron energy and angular measurementsNuclear Instruments and Methods, 1980
- Molecular Structure of Gaseous (TaF5)3 by Electron Diffraction.Acta Chemica Scandinavica, 1979