Thermal Effects on Lifetime of Minority Carriers in Germanium
- 1 October 1954
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 96 (1) , 46
- https://doi.org/10.1103/PhysRev.96.46
Abstract
Earlier work has shown that germanium may be heated to elevated temperatures (∼875°C) without significant change in its room temperature resistivity, provided special care is taken to prevent chemical contamination. Such precautions were not sufficient, however, to prevent a drastic decrease in the minority carrier lifetime.Keywords
This publication has 6 references indexed in Scilit:
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- Effect of Nickel and Copper Impurities on the Recombination of Holes and Electrons in GermaniumThe Journal of Physical Chemistry, 1953
- Thermally Induced Acceptors in Single Crystal GermaniumPhysical Review B, 1953
- Temporary Traps in Silicon and GermaniumPhysical Review B, 1953
- Impurity Effects in the Thermal Conversion of GermaniumPhysical Review B, 1952
- Copper as an Acceptor Element in GermaniumPhysical Review B, 1952