Temperature-insensitive offset reduction in a Hall effect device
- 6 June 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (23) , 3121-3123
- https://doi.org/10.1063/1.111974
Abstract
A double current technique applied to a double boundary device produces dual boundary specific Hall effects even above room temperature. It is shown that current compensation allows in situ cancellation of the offset voltage in the Hall effect, originating from effective contact misalignments. Thus, this method reduces the temperature-dependent offset originating from the T dependence of the resistance, and improves the sensitivity of the Hall element to the external magnetic field. Possible applications such as field sensing elements, contactless switches, and position sensors are cited.Keywords
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