1000 h stable operation of AlGaAs/GaAs light emitting diodes on Si substrates
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 962-963
- https://doi.org/10.1109/iedm.1991.235265
Abstract
An AlGaAs/GaAs light emitting diode (LED) fabricated on Si substrate operated for more than 1000 h at room temperature without any significant degradation. An UCGAS (undercut GaAs on Si) structure has been used in the LED structure to reduce both the thermal stress and the dislocation density. An UCGAS LED does not show any significant degradation even after 1000 h of operation, while mesa-LED degrades quickly. This result demonstrates that reliable AlGaAs/GaAs light emitting devices can be fabricated on Si substrates.<>Keywords
This publication has 1 reference indexed in Scilit:
- Thermal stress and defect reduction in undercut GaAs on Si substrateElectronics Letters, 1991