Comparison of single-and two-phase LPE growth methods for InGaAsP/InP lasers and LEDs
- 1 July 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 54 (1) , 69-75
- https://doi.org/10.1016/0022-0248(81)90251-7
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniquesJournal of Electronic Materials, 1980
- Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InPApplied Physics Letters, 1978
- Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μmApplied Physics Letters, 1978
- 500-hour CW Operation of InGaAsP/InP Double Heterostructure Lasers Fabricated on (100)-InP SubstratesJapanese Journal of Applied Physics, 1977
- Room-temperature operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μmApplied Physics Letters, 1976
- Misorientation and tetragonal distortion in heteroepitaxial vapor-Grown III–V structuresPhysica Status Solidi (a), 1975
- Bandgap and lattice constant of GaInAsP as a function of alloy compositionJournal of Electronic Materials, 1974