Generation of Dislocations Induced by Chemical Vapor Deposited Si₃N₄Films on Silicon

• 1 August 1972
• journal article
• Published by IOP Publishing in Japanese Journal of Applied Physics
• Vol. 11  (8) , 1097-1105
• https://doi.org/10.1143/jjap.11.1097

Abstract

Keywords

• ROOM TEMPERATURE
• DISLOCATIONS
• FLOW RATE
• HEAT TREATMENT