Effects of exchange-correlation and surface strain on the subband separations in Si(111) surface inversion layers
- 1 January 1982
- journal article
- Published by Elsevier in Surface Science
- Vol. 113 (1-3) , 50-54
- https://doi.org/10.1016/0039-6028(82)90562-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Exchange-correlation effects in silicon (111) inversion layers: Strain-enhanced valley-occupancy phase transitionPhysical Review B, 1981
- A simplified treatment of exchange and correlation in semiconducting surface inversion layersSolid State Communications, 1980
- Resolution of Shubnikov-de Haas Paradoxes in Si Inversion LayersPhysical Review Letters, 1980
- Interaction-Induced Transition at Low Densities in Silicon Inversion LayerPhysical Review Letters, 1979
- Observation of Sixfold Valley Degeneracy in Electron Inversion Layers on Si(111)Physical Review Letters, 1979
- Valley degeneracy of electrons in accumulation and inversion layers on Si (111) surfaceSolid State Communications, 1976
- Electronic Structure of Inversion Layers in Many-Valley SemiconductorsPhysical Review Letters, 1976