Planarized aluminum metallization for sub-0.5 mu m CMOS technology
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 8, 51-54
- https://doi.org/10.1109/iedm.1990.237228
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- The properties of aluminum thin films sputter deposited at elevated temperaturesJournal of Vacuum Science & Technology A, 1988
- High-aspect-ratio via-hole filling with aluminum melting by excimer laser irradiation for multilevel interconnectionIEEE Electron Device Letters, 1987