Numerical simulations of the capacitance of forward-biased Schottky-diodes
- 1 June 1991
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (6) , 587-590
- https://doi.org/10.1016/0038-1101(91)90129-m
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Numerical modeling of hot electrons in n-GaAs Schottky-barrier diodesIEEE Transactions on Electron Devices, 1990
- Interface capacitance in metal-semiconductor junctionsJournal of Applied Physics, 1989
- Modeling the non-quasi-static metal-semiconductor space-charge-region capacitanceJournal of Applied Physics, 1989
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966
- Diffusion of Hot and Cold Electrons in Semiconductor BarriersPhysical Review B, 1962