High-voltage buried-channel MOS fabricated by oxygen implantation into silicon

3 September 1981

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 17 (18) , 640-641
https://doi.org/10.1049/el:19810449

Abstract

A high-voltage offset-gate buried-channel MOS made on a SOS-like substrate is described. An isolation layer is formed by an oxygen implantation process called SIMOX. A 410 V buried SiO₂ breakdown voltage and a 180 V drain breakdown voltage are obtained.

Keywords

ISOLATION LAYER
SI:O
SIO2
MOS IC
SOS-LIKE SUBSTRATE
HV BURIED CHANNEL MOSFET
SEPARATION BY UNPLANTED OXYGEN (SIMOX) TECHNOLOGY
DRAIN BREAKDOWN VOLTAGE

This publication has 1 reference indexed in Scilit:

A normally-off type buried channel MOSFET for VLSI circuits
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1978