Resistive and structural properties of La1.85Sr0.15Cu1−yZnyO4 films

Single-phase $c$ -axis aligned ${\mathrm{La}}_{\text{1.85}}{\mathrm{Sr}}_{\text{0.15}}{\mathrm{Cu}}_{\text{1−y}}{\mathrm{Zn}}_y{\mathrm{O}}_4$ films were grown by pulsed laser deposition with Zn contents up to a value of y of 0.12. The film properties indicate the existence of defects, in addition to the Zn impurities, that are unintentionally introduced during the film growth. These defects are probably oxygen vacancies, and have a distinctly different effect on $T_c$ from the Zn. The separation of the two effects resolves earlier ambiguities in the observed rates of $T_c$ depression.