Dislocation motion by double-kink migration in a bent crystal Velocity measurements in silicon
- 1 October 1986
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 54 (4) , 479-487
- https://doi.org/10.1080/01418618608243606
Abstract
The motion of the side arms of a dislocation half-loop in a non-homogeneous strain field is considered in terms of the double-kink mechanism. It is shown that the side arm moves as a unit and remains parallel to the Peierls valleys. This leads to an association of the measured velocity in cantilever bending with the stress at the midpoint of the side arm.Keywords
This publication has 3 references indexed in Scilit:
- On the origin of disclocations observed by X-ray topography during microdeformation tests on f.c.c. metalsPhilosophical Magazine A, 1979
- Dislocation Velocity in Indium AntimonideJournal of the Physics Society Japan, 1968
- Change of Dislocation Velocity With Fermi Level in SiliconPhysical Review Letters, 1967