Near-room-temperature operation of Pb1−xSrxSe infrared diode lasers using molecular beam epitaxy growth techniques
- 26 December 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (26) , 2582-2583
- https://doi.org/10.1063/1.100208
Abstract
Double‐Heterostructure lasers have been fabricated with an active layer of PbSe sandwiched between cladding layers of Pb1−x Srx Se. They were operated up to T=290 K (17 °C) in pulsed and T=169 K in cw mode. This is the highest operational temperature in pulsed mode reported for lead salt lasers in the mid‐infrared. The emission wavelength tunes with temperature from 8.0 μm (T=20 K) to 4.4 μm (T=285 K).Keywords
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