Essential physics of carrier transport in nanoscale MOSFETs
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- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 49 (1) , 133-141
- https://doi.org/10.1109/16.974760
Abstract
The device physics of nanoscale MOSFETs is explored by numerical simulations of a model transistor. The physics of charge control, source velocity saturation due to thermal injection, and scattering in ultrasmall devices are examined. The results show that the essential physics of nanoscale MOSFETs can be understood in terms of a conceptually simple scattering model.Keywords
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