Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High-Voltage Rectifying Devices
- 1 July 1997
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 162 (1) , 389-408
- https://doi.org/10.1002/1521-396x(199707)162:1<389::aid-pssa389>3.0.co;2-x
Abstract
No abstract availableKeywords
This publication has 57 references indexed in Scilit:
- Temperature dependence of the barrier height of metal-semiconductor contacts on 6H-SiCJournal of Applied Physics, 1996
- Chemistry, microstructure, and electrical properties at interfaces between thin films of platinum and alpha (6H) silicon carbide (0001)Journal of Materials Research, 1995
- Chemistry, microstructure, and electrical properties at interfaces between thin films of titanium and alpha (6H) silicon carbide (0001)Journal of Materials Research, 1995
- 2000 V 6H-SiC p-n junction diodes grown by chemical vapor depositionApplied Physics Letters, 1994
- High-voltage (>1 kV) SiC Schottky barrier diodes with low on-resistancesIEEE Electron Device Letters, 1993
- Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substratesJournal of Applied Physics, 1988
- Epitaxial growth and electric characteristics of cubic SiC on siliconJournal of Applied Physics, 1987
- Electron drift velocity in siliconPhysical Review B, 1975
- AuSiC Schottky barrier diodesSolid-State Electronics, 1974
- The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various TemperaturesPhysical Review B, 1931