Midinfrared second-harmonic generation in p-type InAs/GaAs self-assembled quantum dots
- 9 August 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (6) , 835-837
- https://doi.org/10.1063/1.124529
Abstract
Resonant second-harmonic generation is reported in InAs/GaAs self-assembled quantum dots. Frequency doubling is observed between confined states in the valence band of the quantum dots. The second-order nonlinear susceptibility is maximum at 168 meV (7.4 μm wavelength) and is observed for an in-plane polarized excitation. A value of χzxx(2) as large as 2×10−7 (m/V) is measured for one dot plane. A three-dimensional numerical calculation of the valence band states shows that the second-harmonic generation involves a resonant excitation between the h000 and h101 states and a state close to the continuum wetting layer states.Keywords
This publication has 13 references indexed in Scilit:
- Third-harmonic generation in InAs/GaAs self-assembled quantum dotsPhysical Review B, 1999
- In-plane polarized intraband absorption in InAs/GaAs self-assembled quantum dotsPhysical Review B, 1998
- Intraband absorption in n-doped InAs/GaAs quantum dotsApplied Physics Letters, 1997
- Mid-infrared photoconductivity in InAs quantum dotsApplied Physics Letters, 1997
- Spectroscopy of Quantum Levels in Charge-Tunable InGaAs Quantum DotsPhysical Review Letters, 1994
- Resonant harmonic generation and dynamic screening in a double quantum wellPhysical Review Letters, 1994
- Giant, triply resonant, third-order nonlinear susceptibilityin coupled quantum wellsPhysical Review Letters, 1992
- Resonant Stark tuning of second-order susceptibility in coupled quantum wellsApplied Physics Letters, 1992
- Detailed analysis of second-harmonic generation near 10.6 μm in GaAs/AlGaAs asymmetric quantum wellsApplied Physics Letters, 1990
- Observation of extremely large quadratic susceptibility at 9.6–10.8μm in electric-field-biased AlGaAs quantum wellsPhysical Review Letters, 1989