A New Dielectric Breakdown Mechanism In Silicon Dioxides
- 1 January 1997
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Modeling and characterization of gate oxide reliabilityIEEE Transactions on Electron Devices, 1988
- Modeling of charge-injection effects in metal-oxide-semiconductor structuresJournal of Applied Physics, 1988