Increase in photoluminescence of Zn-doped p -type InP after hydrogenation

9 November 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (23) , 1584-1586
https://doi.org/10.1049/el:19891064

Abstract

We report on the effect of hydrogenation on the lowtempeTature (5.5 K) photoluminescence properties of Zndoped p-type (p ∼ 3 × 10¹⁸cm^-3) InP substrates. The photoluminescence spectrum of the as-grown sample shows a Zn_In acceptor-related transition near the band-edge at l.386eV, a Zn-related PL band at l.214eV and a phosphorus vacancy V_p-related PL band at 1.01 eV. After hydrogenation of the samples by exposure to hydrogen plasma, which completely passivates the Zn_In acceptors over a depth of more than 1μ, the deep luminescence bands (1.214 and 1.01eV) disappeared, with a concomitant ∼ 2000-fold increase in the intensity of the near-band-edge emission. Such a large increase in radiative efficiency together with the elimination of the deep luminescence bands indicates hydrogen passivation of deep nonradiative centers in addition to passivation of shallow acceptors.

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