New 1.6 μm wavelength GaInAsP/InP buried heterostructure lasers
- 9 May 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (10) , 349-350
- https://doi.org/10.1049/el:19800249
Abstract
1.6 μm wavelength GaInAsP/InP buried heterostructure (b.h.) lasers were fabricated by a new process. The low threshold of 25 mA was obtained for a cavity length of about 300 μm and stripe width of 3–5 μm. Room temperature c.w. operation was also obtained with the threshold of 37 mA. Transverse single-mode operation up to more than three times the threshold was obtained.Keywords
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