The stability and reflection gain of subcritically doped Gunn diodes
- 31 October 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (10) , 965-977
- https://doi.org/10.1016/0038-1101(68)90116-0
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Stable domain propagation in the Gunn effectBritish Journal of Applied Physics, 1966
- Calculation of the velocity-field characteristic for gallium arsenidePhysics Letters, 1966
- High-field distribution function in GaAsIEEE Transactions on Electron Devices, 1966
- Microwave phenomena in bulk GaAsIEEE Transactions on Electron Devices, 1966
- Microwave amplification in a GaAs bulk semiconductorIEEE Transactions on Electron Devices, 1966
- Bulk GaAs microwave amplifiersIEEE Transactions on Electron Devices, 1966
- MICROWAVE AMPLIFICATION IN A DC-BIASED BULK SEMICONDUCTORApplied Physics Letters, 1965
- Instabilities of Current in III–V SemiconductorsIBM Journal of Research and Development, 1964
- Microwave oscillations of current in III–V semiconductorsSolid State Communications, 1963
- Space-Charge Limited Emission in SemiconductorsPhysical Review B, 1953