Analysis of radiative and nonradiative recombination law in lightly doped InGaAsP lasers

3 March 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (5) , 154-155
https://doi.org/10.1049/el:19830108

Abstract

A re-analysis of the recombination data of Su et al. on lightly doped InGaAsP lasers indicates that their figure for the Auger coefficient is uncertain and up to three times too low, does not support their claim of saturation in the radiative recombination, but confirms the presence of a second nonradiative mechanism more sensitively dependent on carrier concentration than the cube.

Keywords

SATURATION
RECOMBINATION DATA
RADIATIVE RECOMBINATION
NONRADIATIVE RECOMBINATION
III-V SEMICONDUCTOR
AUGER COEFFICIENT
LIGHTLY DOPED INGAASP LASERS
CARRIER CONCENTRATION

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