New lateral GaAs transistor
- 1 January 1984
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 201-204
- https://doi.org/10.1109/iedm.1984.190679
Abstract
A GaAs transistor with new structure and new mechanism was proposed and demonstrated, which utilizes the semi-insulating region not only as the isolation but also as the active region. It has a lateral structure, where p+region was formed between two n+regions directly into semi-insulating GaAs. p+region acts as the hole injector to form virtual base in the semi-insulating region. Bipolar operation with a current gain of 4 was obtained for the device with the geometry of 1.3 µm length of p+region between 3 µm space of two n+region. Its propagation delay time evaluated by a 15-stage ring oscillator with DCTL was 230 psec.Keywords
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