Relation between channel conductance and characteristics of thin-film transistors
- 1 October 1965
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 8 (10) , 835-837
- https://doi.org/10.1016/0038-1101(65)90081-x
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Physical processes in insulated-gate field-effect transistorsSolid-State Electronics, 1964