Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge Interface
- 31 January 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 38 (5) , 237-240
- https://doi.org/10.1103/physrevlett.38.237
Abstract
The potential, charge density, and interface states have been calculated for the ideal interface between intrinsic GaAs, terminated on a (100) Ga plane, and intrinsic Ge. The conduction band is continuous across the interface and negligible interface dipole moment is found. Fractional occupancy of the interface bonds arises via a single partially occupied band of interface states. We find that a long-range potential disturbance must occur unless interface bonds are longer than bulk bonds by about 4%.Keywords
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