A new GaAs bipolar-unipolar transition negative differential resistance device (BUNDR)

1 January 1987

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1987.191352

Abstract

A novel three-teminal GaAs negative differential resistance device prepared by molecular beam epitaxy is developed. It's a new "N" shaped voltage controlled device utilizing a n+-i- δp+-i-n+bulk barrier transistor structure with a V-grooved metal contact to the δp+thin base. The peak-to-valley current ratios can be modulated by the third external applied voltage. A large peak-to-valley current ratio of 98 was obtained for a base to emitter forward bias of 5.0V at room temperature, at an applied emitter-collector bias of 5.7V.

Keywords

GALLIUM ARSENIDE
TEMPERATURE
MOLECULAR BEAM EPITAXIAL GROWTH
FABRICATION
DOPING
YARN
LABORATORIES
SHAPE CONTROL
VOLTAGE CONTROL
TUNNELING

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