The mechanism of growth of quartz crystals into fused silica
- 1 December 1980
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (12) , 6160-6164
- https://doi.org/10.1063/1.327647
Abstract
It is proposed that the growth of quartz crystals into fused silica is effected by a mechanism involving the breaking of an Si‐O bond and its association with an OH group, followed by cooperative motion of the nonbridging oxygen and the hydroxyl group which results in the crystallization of a row of several molecules along a crystalline‐amorphous interfacial ledge. This mechanism explains, at least qualitatively, all the results of our earlier experimental study of the dependence of quartz crystal growth upon applied pressure: large negative activation volume; single activation enthalpy below Si‐O bond energy; growth velocity constant in time, proportional to the hydroxyl and chlorine content, decreasing with increasing degree of reduction, and enhanced by nonhydrostatic stresses; lower preexponential for the synthetic than for the natural silica.This publication has 5 references indexed in Scilit:
- Dependence of growth rate of quartz in fused silica on pressure and impurity contentJournal of Applied Physics, 1980
- Kinetics of motion of crystal-melt interfacesAIP Conference Proceedings, 1979
- Ring Configurations in a Random Network Model of Vitreous SilicaNature, 1967
- Frequency factors and isotope effects in solid state rate processesJournal of Physics and Chemistry of Solids, 1957
- THE ATOMIC ARRANGEMENT IN GLASSJournal of the American Chemical Society, 1932