Very low noise photodetector based on the single electron transistor
- 7 December 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (23) , 2820-2822
- https://doi.org/10.1063/1.108048
Abstract
We demonstrate the use of the single electron transistor (SET) as an amplifier for a photodetector operated at 20 mK. The unparalleled low input noise of the SET permits the observation of very small numbers of charge carriers generated in a bulk p‐type Si substrate. We present data showing the response of the detector when it is illuminated by extremely low levels of red light (λ=650 nm). From the ‘‘dark current’’ noise of 0.06 e/s, we estimate a dc noise‐equivalent power NEP=2×10−21 W/√Hz for infrared light with λ=30 μm, and from this calculate a detectivity D*=8×1017 cm⋅√Hz/W.Keywords
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