Faraday rotation from Zn1−xFexSe epilayers
- 3 February 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (5) , 583-585
- https://doi.org/10.1063/1.106617
Abstract
We present Faraday rotation measurements on Zn1−xFexSe films grown by molecular beam epitaxy. The samples exhibit giant Faraday rotation characteristic of diluted magnetic semiconductors. Measurements were carried out at T=4.2 K and in magnetic fields up to 8 T. The Faraday rotation angle shows a strong resonance for photon energies close to the band gap. The resonance curves were fitted by a simple dielectric model using the exciton oscillator strength as a fitting parameter.Keywords
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