Substrate rotation-induced compositional oscillation in molecular beam epitaxy (MBE)

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Abstract
Small amplitude periodic compositional variations in the growth direction have been observed in GaxIn1−x As and AlxIn1−x As layers grown by MBE with a rotating substrate holder in transmission electron microscopy (TEM) studies. The period of these compositional oscillations has been correlated with the substrate rotation frequency. These oscillations have been attributed to the small variations in the flux profile of the group III elements over the substrate area. Sharp peaks obtained in x-ray diffraction studies indicate the absence of compositional grading in the growth direction, despite these oscillations.

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