IVB-2 Inversion layer mobility of MOSFET's with Nitrided Oxide gate dielectrics
- 1 November 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (11) , 2542
- https://doi.org/10.1109/T-ED.1985.22348