Voltage Decay Measurement of Photoexcitation and Trapping of Carriers in Selenium
- 1 June 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (6) , 1863-1865
- https://doi.org/10.1063/1.1713756
Abstract
The trapping range of holes and electrons in amorphous selenium layers has been measured with a voltage decay technique. Values of 1.1 to 7.8×10−8 cm2/V were obtained for holes. This agreed well with values obtained by the pulse method. An electron range of 5.0 to 8.3×10−8 cm2/V was measured. Quantum efficiencies for photoexcitation of holes and electrons ranged from 7.5×10−4 to 1.0, depending on the wavelength of the incident light.This publication has 4 references indexed in Scilit:
- Photoinduced Discharge Characteristics of Amorphous Selenium PlatesJournal of Applied Physics, 1963
- Electron and Hole Transport in CdS CrystalsProceedings of the Physical Society, 1963
- Drift Mobilities of Electrons and Holes and Space-Charge-Limited Currents in Amorphous Selenium FilmsPhysical Review B, 1962
- Charge Carrier Production and Mobility in Anthracene CrystalsPhysical Review B, 1960