Observation of electromigration in heavily doped polycrystalline silicon thin films
- 15 March 1980
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (6) , 428-430
- https://doi.org/10.1063/1.91526
Abstract
Heavily doped P‐ and N‐type polycrystalline silicon conductor stripes were subjected to a high direct current density stress of ∼1×106 A/cm2. It was found that all of the N‐type stripes failed near the cathode, whereas all of the P–type stripes failed near the anode, thus pointing out the importance of the sign of the effective mass of the charge carriers in the momentum exchange that leads to electromigration. A model where migration of the dopant is responsible for the observed failures is suggested.Keywords
This publication has 11 references indexed in Scilit:
- Electromigration: The electron windPhysical Review B, 1979
- Electromigration and Hall effect in cobalt filmsJournal of Physics and Chemistry of Solids, 1977
- Electromigration and spatial variations in metallic conductivityJournal of Electronic Materials, 1975
- Attempts to measure the electromigration effect on the system CdS:AuPhysica Status Solidi (a), 1974
- The force on a moving charge in an electron gasJournal of Physics C: Solid State Physics, 1973
- Electromigration and crevice formation in thin metallic filmsThin Solid Films, 1972
- ON THE DIRECTION OF ELECTROMIGRATION IN THIN SILVER, GOLD, AND COPPER FILMSApplied Physics Letters, 1971
- The Effect of Applied Electric Field on Diffusion of Impurities in Gallium ArsenidePhysica Status Solidi (b), 1967
- Sur l'electrolyse des alliages metalliquesJournal of Physics and Chemistry of Solids, 1962
- Current-induced marker motion in gold wiresJournal of Physics and Chemistry of Solids, 1961