Low‐Temperature (900°C) Si Epitaxial Growth on Si (100) after HF Treatment
- 1 October 1990
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 137 (10) , 3257-3260
- https://doi.org/10.1149/1.2086195
Abstract
Si (100) substrates were used for low‐temperature (900°C) epitaxy. A conventional low‐pressure chemical vapor deposition (LPCVD) system was used for Si deposition. The stacking fault density (SFD) in the epitaxial layer drastically increased with the duration of the ultrapure water rinse time after dipping. Oxygen, fluorine, and carbon contaminants after treatment were measured by x‐ray photoelectron spectroscopy. The chemical bonding state of the residual carbon was related to the concentrations. For the 5% treatment, which corresponded to the optimum epitaxial condition, mainly C‒O was present.Keywords
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