Dual-gate gallium-arsenide microwave field-effect transistor
- 4 November 1971
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 7 (22) , 661-662
- https://doi.org/10.1049/el:19710451
Abstract
Dual-gate gallium-arsenide field-effect transistors have been fabricated which give power gains greater than those which can be obtained from single-gate devices of similar gate length. Unconditionally stable gains in excess of 12 dB at 5 GHz have been measured for these devices.Keywords
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