Compensated Silicon-Impurity Conduction Bolometer
- 1 December 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (13) , 5861-5863
- https://doi.org/10.1063/1.1660027
Abstract
The capability and performance of compensated Si (Sb ∼ 2×1018 cm−3; B ∼ 2×1017 cm−3) impurity conduction bolometers as extremely sensitive detectors of far‐infrared radiation (2 mm to 30 μm) is described. Electrical and far‐infrared measurements indicate a NEP ∼ 2.5×10−14 W/Hz1/2, and a response time ∼ 10−2 sec, when operated at 1.5°K.This publication has 7 references indexed in Scilit:
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- Theory of Absorption of Electromagnetic Radiation by Hopping in-Type Silicon and Germanium. IIPhysical Review B, 1965
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- Impurity Conduction in SiliconPhysical Review B, 1961