GaInAs/AlGaInAs DH and MQW lasers with 1.5–1.7 μm lasing wavelengths grown by atmospheric pressure MOVPE
- 13 April 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (8) , 516-517
- https://doi.org/10.1049/el:19890353
Abstract
The first successful growth and fabrication of long wavelength (1.5–1.7 μm) DH and MQW lasers by atmospheric pressure MOVPE in a ‘phosphorus-free’ material system is reported. The GaInAs/AlGaInAs DH and MQW lasers were grown on InP substrates. DH lasers emitting at around 1690 nm exhibit threshold current densities down to 2.8 kA/cm2 at 25°C; the characteristic temperature is 50 K in the 15–55°C range. First MQW lasers with 1565 nm emission wavelength have threshold current densities around 3.2 kA/cm2.Keywords
This publication has 0 references indexed in Scilit: