The preparation and some properties of transparent conducting ZnO for use in solar cells

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Abstract
The fabrication of transparent conducting films of ZnO is described. These films are deposited on room temperature glass substrates using an enhanced reactive evaporation technique in which the power in a dc glow discharge, the oxygen pressure, and the zinc evaporation rate are controlled separately. Each of these parameters is adjusted to optimize the required film property.Films with ρ = 0.0014 Ω cm and an absorption of ~ 1% at 550 nm and 40 Ω/ have been prepared with no annealing. The electron carrier densities are ~ 1.3 × 1020 cm−3 and the mobilities are ~ 34 cm2/(Vs) with a variation of less than ~ 15% between −120 and +150 °C.

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