Theory of intrinsic defects in III–V semiconductors
- 30 November 1981
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 24-25, 355-358
- https://doi.org/10.1016/0022-2313(81)90289-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Submillimeter EPR evidence for the As antisite defect in GaAsSolid State Communications, 1980
- Surface vacancies in InP and GaAlAsApplied Physics Letters, 1980
- Transmission and reflection coefficients of carriers at an abrupt GaAs-GaAlAs (100) interfacePhysical Review B, 1979
- ESR detection of antisite lattice defects in GaP, CdSiP2, and ZnGeP2Applied Physics Letters, 1976
- Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductorsPhysical Review B, 1976
- Electronic structure based on the local atomic environment for tight-binding bands. IIJournal of Physics C: Solid State Physics, 1975