Depolarization shift and subband–Landau-level coupling in AlAs-GaAs heterojunctions

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Abstract
The subband structure of electron inversion layers in AlAs-GaAs heterojunctions is studied simultaneously via directly excited intersubband resonances and resonant subband–Landau-level coupling with far-infrared spectroscopy. The optical intersubband-resonance transition energies, obtained at zero magnetic field strength, are higher than the energies obtained by subband–Landau-level coupling. Intersubband-resonance experiments in magnetic fields applied parallel to the sample plane prove, that the depolarization shift and its final-state correction can account for these differences. Our experiment provides strong evidence that resonant subband– Landau-level coupling yields the subband separations.