Binding energy of ionized-donor-bound excitons in two-dimensional semiconductors
- 15 March 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (8) , 5345-5348
- https://doi.org/10.1103/physrevb.39.5345
Abstract
The ground-state energies of the two-dimensional ionized-donor-bound exciton (,X) have been calculated variationally for all values of the effective electron-to-hole mass ratio σ. They are compared with those obtained in the three-dimensional case using the same 55-term wave function. We found that in the two-dimensional case the (,X) complex remains stable until σ=0.88, which is about two times larger than the value obtained in the three-dimensional case.
This publication has 8 references indexed in Scilit:
- Optical absorption by an exciton bound to an ionized donor impurity in anisotropic semiconductorsPhysica Status Solidi (b), 1983
- Binding energy of biexcitons and bound excitons in quantum wellsPhysical Review B, 1983
- Binding energies of wannier excitons in GaAs-Ga1−xAlxAs quantum well structuresSolid State Communications, 1983
- Exciton binding energy in quantum wellsPhysical Review B, 1982
- Bound excitons in p-doped GaAs quantum wellsSolid State Communications, 1982
- Energy of the Exciton–Ionized Donor Complex in Anisotropic SemiconductorsPhysica Status Solidi (b), 1982
- Properties of Excitons Bound to Ionized DonorsPhysical Review B, 1971
- Neue Berechnung der Energie des Heliums im Grundzustande, sowie des tiefsten Terms von Ortho-HeliumThe European Physical Journal A, 1929