Measurements on the velocity/field characteristic of indium phosphide

7 October 1971

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 7 (20) , 625-626
https://doi.org/10.1049/el:19710422

Abstract

The velocity/field characteristic of InP has been found for fields between 14 and 32 kV/cm from space-charge-wave amplification, and between 32 and 200 kV/cm from measurements on dipole domains. The threshold field (12–13 kV/cm) and the maximum negative differential mobility (1000 cm²/Vs) are compared with theory.

Keywords

SEMICONDUCTOR MATERIALS
ELECTRON VELOCITY/FIELD CHARACTERISTIC
DIPOLE DOMAINS
ELECTRON MOBILITY
NEGATIVE DIFFERENTIAL MOBILITY
GAAS SPACE CHARGE WAVE AMPLIFIERS
INP

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