Bulk hot-electron properties of cubic semiconductors

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Abstract
This paper contains a review of charge transport properties at high electric fields in bulk cubic semiconductors. The microscopic theoretical interpretation follows a semi-classical approach and is based on the knowledge of the band structure and scattering mechanism of the material under investigation. For the solution of the Boltzmann equation, the Monte-Carlo simulation technique is considered, which provides an ‘exact’ numerical solution limited only by the simplifying assumptions inherent in the physical model assumed. Experimental techniques for the measurements of the most important transport quantities are briefly surveyed. Comparison between theory and experiment is reported for both electron and hole transport properties in Si, Ge and GaAs. These substances, besides being the best known materials, can in fact be considered as models for any other cubic semiconductor.