Mechanism of nitrogen coimplant for suppressing boron penetration in p+-polycrystalline silicon gate of p metal–oxide semiconductor field effect transistor
- 16 September 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (12) , 1781-1782
- https://doi.org/10.1063/1.117484
Abstract
The mechanism of the nitrogen co‐implant to suppress the boron penetration in p+‐polycrystalline silicon gate has been investigated. The nitrogen coimplant with the BF+2 combines with the boron to form a B–N complex which results in a retardation of boron diffusion. It is found that metal–oxide–silicon capacitors with nitrogen implantation show improved electrical properties.Keywords
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