In situ deformation measurement on the surface of Si wafers

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Abstract
An interferometric measuring system which allows the deformation of the surface of silicon wafers during semiconductor production to be continuously monitored is presented. Changes in the sample surface can be measured during manufacture if it can be illuminated through a window and the deformation changes observed by optoelectronic detectors. A measuring arrangement consisting of a minimum number of detectors and based on a Michelson interferometer was constructed for special symmetrical samples.