Four-wave mixing via optically generated free carriers in Hg1−xCdxTe

1 October 1982

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 41 (7) , 590-592
https://doi.org/10.1063/1.93619

Abstract

Four‐wave mixing experiments are used to study the variation of the third‐order susceptibility χ⁽³⁾, with frequency difference Δω and laser intensity I in low carrier concentration HgCdTe crystals. At small Δω, χ⁽³⁾ is caused by nonparabolicity of free electrons generated by two‐photon absorption, with χ⁽³⁾ scaling as Δω⁻¹ and I^2/3. The Δω variation of χ⁽³⁾ indicates that the electron thermalization time is longer than 8 ps. At large Δω, χ⁽³⁾≃3×10⁻⁸ esu is mainly due to bound electrons.

Keywords

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