1200 V, 50 A Trench Oxide PiN Schottky (TOPS) diode
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1 (01972618) , 353-358
- https://doi.org/10.1109/ias.1999.799980
Abstract
A novel high voltage rectifier, called the Trench Oxide PiN Schottky (TOPS) rectifier, is described in this paper. The TOPS rectifier is a synergistic combination of a Schottky rectifier and a P/sup +/iN diode, using a trench oxide structure to achieve high aspect ratio P+ regions, which permits a superior trade-off between forward voltage drop and switching characteristics, as compared with SSD (Static Shielding Diode), P/sup -/-i-N, and P/sup +/-i-N rectifiers, white maintaining an excellent blocking capability. A reverse leakage current of 100 nA was measured at 1200 V for a high current TOPS rectifier (die area=0.5 cm/sup 2/), which is comparable to that in a P/sup +/IN diode. TOPS rectifiers with different Schottky/P/sup +/ ratios, SSD, P/sup -/-i-N, and P/sup +/-i-N rectifiers were fabricated using punch-through (EPI) wafers. The reverse recovery characteristics of the TOPS rectifier has a much smaller peak reverse recovery current I/sub RP/ than those in the SSD and P/sup +/-i-N rectifiers. The stored charge Q/sub rr/ in the TOPS rectifier is smaller than that in the P/sup -/-i-N rectifier.Keywords
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