Spin Energy Transfer from Donor Spin System to Mobile Electron System in P-Doped Si
- 1 April 1971
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 30 (4) , 1207-1208
- https://doi.org/10.1143/jpsj.30.1207
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Microwave hot electron effect and resistivity decrease due to donor spin resonance in P-doped Si.Solid State Communications, 1970
- Bolometric Detection of ESR in P-Doped Si at Low TemperatureJournal of the Physics Society Japan, 1970
- Effect of Spin Resonance on Hot Electrons by Spin-Orbit Coupling in-Type InSbPhysical Review Letters, 1965
- Resistivity and hall coefficient of antimony-doped germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1958