A new method for the study of dislocation etch pits

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Abstract
A new method of etching is described. A comparative study of etch pits produced by the new method of etching as well as the usual method is made. It is found that the pits grow more in depth when etched by the dynamic method than when etched by the static method. It is observed that the structures of the pits produced by these methods also differ slightly. The depths of the pits have been measured and it is established that in the dynamic method of etching the development of pits takes place more in depth than in extension. It is shown that the surface defects extend only up to a few molecular layers and therefore, when etched, the pits nucleated at these defects develop only in extension with increase in the time of etching and ultimately interefere with one another, thus producing an effect as if they are washed away. The pits nucleated at the dislocations penetrate deeper into the body of the crystal. Perfect correlation has been established in regard to the individual isolated pits produced on the matched faces even after polishing both of them. And thus the dislocation etch pits are clearly distinguished from the etch pits nucleated at other surface defects in a characteristic manner.

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